Optoelectronic device
US10185203B1 · kind B1 · utility
9Cited by
52References
39Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 8, 2017 |
| Grant date | Jan 22, 2019 |
| Priority date | — |
| Expiry date | Sep 8, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P80/30
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region, and wherein the optically active region is formed of: SiGeSn, GeSn, InGaNAs, or InGaNAsSb.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.