Thin film transistor substrate and display using the same
US10186529B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 26, 2016 |
| Grant date | Jan 22, 2019 |
| Priority date | — |
| Expiry date | Aug 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/481
Abstract
A display is disclosed which includes a substrate, a first thin film transistor, a second thin film transistor, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first thin film transistor is disposed in a first area on the substrate. The second thin film transistor is disposed in a second area on the substrate. The first storage capacitor electrode is disposed in a third area on the substrate. The oxide layer covers the first thin film transistor and the second thin film transistor, and exposes the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode includes a first metal layer and a second metal layer, and overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first thin film transistor, the second thin film transistor and the second storage capacitor electrode. The pixel electrode is disposed on the planar layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.