Systems and methods for forming diamond heterojunction junction devices
US10186584B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Aug 18, 2016 |
| Grant date | Jan 22, 2019 |
| Priority date | — |
| Expiry date | Aug 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a p-n junction device comprises providing a base layer including a p-type diamond. A monolayer or few layer of a transition metal dichalcogenide (TMDC) is disposed on at least a portion of the base layer so as to form a heterojunction therebetween. The TMDC monolayer is an n-type layer such that the heterojunction between the intrinsic and p-type diamond base layer and the n-type TMDC monolayer is a p-n junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.