Semiconductor substrate and semiconductor device
US10186588B1 · kind B1 · utility
5Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2018 |
| Grant date | Jan 22, 2019 |
| Priority date | — |
| Expiry date | Feb 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
According to one embodiment, a semiconductor substrate includes a first semiconductor layer including Alx1Ga1-x1N (0<x1≤1) and including carbon and oxygen, and a second semiconductor layer including Alx2Ga1-x2N (0<x2<x1) and including carbon and oxygen. A second ratio of a carbon concentration of the second semiconductor layer to an oxygen concentration of the second semiconductor layer is 730 or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.