Integrated photodetector
US10186623B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2016 |
| Grant date | Jan 22, 2019 |
| Priority date | — |
| Expiry date | Feb 24, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/221
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An integrated circuit that includes a substrate, a photodiode, and a Fresnel structure. The photodiode is formed on the substrate, and it has a p-n junction. The Fresnel structure is formed above the photodiode, and it defines a focal zone that is positioned within a proximity of the p-n junction. In one aspect, the Fresnel structure may include a trench pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In another aspect, the Fresnel structure may include a wiring pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In yet another aspect, the Fresnel structure may include a transparent dielectric pattern that functions as a refractive means for redirecting and concentrating incident photons to the focal zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.