Leakage current compensation circuit and semiconductor device
US10191504B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2018 |
| Grant date | Jan 29, 2019 |
| Priority date | — |
| Expiry date | Jan 25, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/58
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
Provided is a leakage current compensation circuit including: a compensation MOS transistor, which has a drain and a source connected to each other, and a bulk connected to a ground terminal, and is configured to generate a compensation current that is equal in magnitude to a leakage current of a MOS transistor of a current output circuit; and a current mirror circuit, which has an input terminal connected to the drain and the source of the compensation MOS transistor, and an output terminal connected to the MOS transistor of the current output circuit. The leakage current compensation circuit includes the MOS transistor for compensation for the leakage current, which has a small area, and is capable of compensating for a gate leakage current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.