Semiconductor device and method of manufacturing the same
US10192823B2 · kind B2 · utility
4Cited by
7References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2016 |
| Grant date | Jan 29, 2019 |
| Priority date | — |
| Expiry date | Aug 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device and a method of manufacturing the same a fuse structure may be formed during formation of first to third contact plugs connected to a transistor. The fuse structure may include first and second fuse contact plugs having the same height as the first and second contact plugs, and a connection pattern having the same height as the third contact plug. The connection pattern may be connected between the first and second fuse contact plugs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.