Thin-film transistor array substrate
US10192957B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2015 |
| Grant date | Jan 29, 2019 |
| Priority date | — |
| Expiry date | Dec 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
a thin-film transistor according to an exemplary embodiment of the present invention comprises an active layer; an intermediate layer; a gate insulating film; a gate electrode; an interlayer insulating film; and source and drain electrodes. The active layer is positioned on a substrate, and the gate insulating film is positioned on the active layer. The gate electrode is positioned on the gate insulating film, and the interlayer insulating film is positioned on the gate electrode. The source and drain electrodes are positioned on the interlayer insulating film and connected to the active layer. The intermediate layer is positioned between the active layer and the gate insulating film, and made of an oxide semiconductor comprising a Group IV element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.