Semiconductor devices having gate structures with skirt regions
US10192968B2 · kind B2 · utility
3Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2016 |
| Grant date | Jan 29, 2019 |
| Priority date | — |
| Expiry date | Jun 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes an active fin protruding upwardly from a substrate and extending in a first direction and a gate structure extending in a second direction intersecting to cross the active fin, where a first width of a lower portion of the gate structure that contacts the active fin is greater than a second width of the lower portion of the gate structure that is spaced apart from the active fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.