Semiconductor quantum dot device and method for forming a scalable linear array of quantum dots
US10192976B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2016 |
| Grant date | Jan 29, 2019 |
| Priority date | — |
| Expiry date | Jul 12, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
An exemplary quantum dot device can be provided, which can include, for example, at least three conductive layers and at least two insulating layers electrically insulating the at least three conductive layers from one another. For example, one of the conductive layers can be composed of a different material than the other two of the conductive layers. The conductive layers can be composed of (i) aluminum, (ii) gold, (iii) copper or (iv) polysilicon, and/or the at least three conductive layers can be composed at least partially of (i) aluminum, (ii) gold, (iii) copper or (iv) polysilicon. The insulating layers can be composed of (i) silicon oxide, (ii) silicon nitride and/or (iii) aluminum oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.