Semiconductor apparatus
US10192978B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2016 |
| Grant date | Jan 29, 2019 |
| Priority date | — |
| Expiry date | Oct 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor apparatus includes: a p-type base layer provided on a top surface side of an n-type drift layer; an n-type emitter layer provided on a top surface side of the p-type base layer; a first control electrode having a trench gate electrode embedded so as to reach from a surface layer of the n-type emitter layer to the n-type drift layer; a second control electrode having a trench gate electrode embedded so as to reach from the p-type base layer to the n-type drift layer; a p-type collector layer provided on a bottom surface side of the n-type drift layer; and a diode whose anode side and cathode side are connected to the first control electrode and the second control electrodes, respectively. It is possible to improve the controllability of dV/dt by a gate resistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.