Vacuum transistor structure using graphene edge field emitter and screen electrode
US10192979B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2016 |
| Grant date | Jan 29, 2019 |
| Priority date | — |
| Expiry date | Nov 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8303
Abstract
A device having: a substrate having a dielectric surface; a gate electrode; a drain electrode; a source electrode having a conductive contact and a two-dimensional material edge; and a dielectric material between the source and the gate. The source is adjacent to the gate. The drain electrode is not laterally between the edge and the gate electrode, and the distance from the drain electrode to the edge is greater than the distance from the gate electrode to the edge. The edge does not contact any other component of the device. The gate, drain, and source are not in electrical contact with each other. There is a line of sight or electron path from the edge to the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.