Thin film transistor, display apparatus having the same, and fabricating method thereof
US10192996B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2017 |
| Grant date | Jan 29, 2019 |
| Priority date | — |
| Expiry date | Mar 6, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/1368
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present application discloses a thin film transistor including a base substrate; an active layer on the base substrate having a channel region, a source electrode contact region, and a drain electrode contact region; an etch stop layer on a side of the channel region distal to the base substrate covering the channel region; a source electrode on a side of the source electrode contact region distal to the base substrate; and a drain electrode on a side of the drain electrode contact region distal to the base substrate. A thickness of the active layer in the source electrode contact region and the drain electrode contact region is substantially the same as a combined thickness of the active layer in the channel region and the etch stop layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.