Light emitting diode chip
US10193019B2 · kind B2 · utility
0Cited by
16References
23Claims
0Family size
Assignees
Inventor
Key dates
| Filing date | Apr 30, 2018 |
| Grant date | Jan 29, 2019 |
| Priority date | — |
| Expiry date | Apr 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/032
Abstract
A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of microstructures on the growth surface. An area of the growth surface occupied by the microstructures is A1 and an area of the growth surface not occupied by the micro-structures is A2, such that A1 and A2 satisfy the relation of 0.1≤A2/(A1+A2)≤0.5. The light emitting diode element layer is disposed on the growth surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.