Optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip

US10193024B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Rainer Hartmann · Regensburg, DE
• Martin Mandl · Lappersdorf, DE
• Simeon Katz · Regensburg, DE
• Andreas Rückerl · Konzell, DE

Key dates

• Filing date: Sep 26, 2016
• Grant date: Jan 29, 2019
• Expiry date: Sep 26, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/857

Abstract

An optoelectronic semiconductor chip includes an active region arranged between a first semiconductor layer and a second semiconductor layer and generates or receives electromagnetic radiation, the first semiconductor layer electrically conductively connects to a first contact, the first contact is formed on a front side of the chip next to the active region, the second semiconductor layer electrically conductively connects to a second contact, the second contact is arranged on the front side of the chip next to the active region, and an electrically insulating separating layer that electrically insulates a rear side of the chip from the active region of the semiconductor chip, and an electrically insulating separating layer includes at least one first separating layer having at least one atomic layer or at least one molecular layer and is deposited by atomic layer deposition or molecular layer deposition.