Semiconductor laser diode, method for producing a semiconductor laser diode and semiconductor laser diode arrangement

US10193303B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Sebastian Taeger · Bad Abbach, DE
• Alexander Bachmann · Ismaning, DE

Key dates

• Filing date: Dec 8, 2014
• Grant date: Jan 29, 2019
• Expiry date: Dec 8, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2301/176
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A semiconductor laser diode is specified, comprising a semiconductor layer sequence (1) with semiconductor layers applied vertically one above another with an active layer (11), which emits laser radiation via a radiation coupling-out surface during operation, wherein the radiation coupling-out surface is formed by a side surface of the semiconductor layer sequence (1), and a heat barrier layer (2) and a metallic contact layer (5) laterally adjacent to one another on a main surface (12) of the semiconductor layer sequence (1), wherein the heat barrier layer (2) is formed by an electrically insulating porous material (9). As a result, the heat arising during operation is conducted via the p-type electrode (5) to a heat sink (20) and the formation of a two-dimensional temperature gradient is avoided. A thermal lens in the edge emitter is thus counteracted. Furthermore, a method for producing a semiconductor laser diode and a semiconductor laser diode arrangement are specified.