Minimizing ringing in wide band gap semiconductor devices
US10193544B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2017 |
| Grant date | Jan 29, 2019 |
| Priority date | — |
| Expiry date | Apr 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Embodiments include a power conversion circuit comprising first and second semiconductor switches, and a drive circuit configured to create a period of operational overlap for the first and second switches by setting a gate voltage of the first switch to an intermediate value above a threshold voltage of the first switch, during turn-on and turn-off operations of the second switch. Embodiments also include a method of operating first and second semiconductor devices, comprising: reducing a gate voltage of the first device to an intermediate value above a threshold voltage while the second device is off; turning off the first device after the second device is on; increasing the gate voltage of the first device to the intermediate value while the second device is on; and fully turning on the first device after the second device is off.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.