Silicon-based component with at least one chamfer and its fabrication method
US10197973B2 · kind B2 · utility
1Cited by
0References
13Claims
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Assignee
Inventor
Key dates
| Filing date | Jun 2, 2016 |
| Grant date | Feb 5, 2019 |
| Priority date | — |
| Expiry date | Aug 11, 2036 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/014
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention relates to a silicon-based component with at least one chamfer formed from a method combining at least one oblique side wall etching step with a “Bosch” etching of vertical side walls, thereby enabling aesthetic improvement and improvement in the mechanical strength of components formed by micromachining a silicon-based wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.