Thermal pad for etch rate uniformity
US10199252B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2017 |
| Grant date | Feb 5, 2019 |
| Priority date | — |
| Expiry date | Oct 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Etch uniformity is improved by providing a thermal pad between an insert ring and electrostatic chuck in an etching chamber. The thermal pad provides a continuous passive heat path to dissipate heat from the insert ring and wafer edge to the electrostatic chuck. The thermal pad helps to keep the temperature of the various components in contact with or near the wafer at a more consistent temperature. Because temperature may affect etch rate, such as with etching hard masks over dummy gate formations, a more consistent etch rate is attained. The thermal pad also provides for etch rate uniformity across the whole wafer and not just at the edge. The thermal pad may be used in an etch process to perform gate replacement by removing hard mask layer(s) over a dummy gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.