Ferroelectric memory device
US10199384B2 · kind B2 · utility
0Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2014 |
| Grant date | Feb 5, 2019 |
| Priority date | — |
| Expiry date | Aug 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/141
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention relates to a ferroelectric memory device comprising at least one layer comprising a ferroelectric polymer, and at least two electrodes either side thereof, the ferroelectric polymer being of general formula P(VDF-X-Y), wherein VDF is vinylidene fluoride motifs, X is trifluoroethylene or tetrafluoroethylene motifs, and Y is motifs from a third monomer, the molar proportion of Y motifs in the polymer being less than or equal to 6.5%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.