Metal oxide thin film transistor and manufacturing method thereof, display substrate and display device
US10199395B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jul 17, 2015 |
| Grant date | Feb 5, 2019 |
| Priority date | — |
| Expiry date | Jul 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a metal oxide thin film transistor, wherein an oxygen deficiency adsorptive removal layer comprising an oxygen deficiency adsorptive removal material is provided between an active layer and a source, and/or between the active layer and a drain. The standard Gibbs free energy of formation of an oxide of the oxygen deficiency adsorptive removal material in a unit volume is larger than that of a metal oxide in the active layer. The present disclosure further provides a display substrate comprising the metal oxide thin film transistor and a display device comprising the display substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.