LDMOS transistors and associated systems and methods

US10199475B2 · kind B2 · utility

Assignee

• Maxim Integrated Products, Inc. · US

Inventors

• John Xia · Fremont, US
• Marco A. Zuniga · Berkeley, US
• Badredin Fatemizadeh · Sunnyvale, US
• Vijay Parthasarathy · Sunnyvale, US

Key dates

• Filing date: May 23, 2017
• Grant date: Feb 5, 2019
• Expiry date: May 23, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/111

Abstract

A lateral double-diffused metal-oxide-semiconductor field effect (LDMOS) transistor includes a silicon semiconductor structure, a dielectric layer at least partially disposed in a trench of the silicon semiconductor structure in a thickness direction, and a gate conductor embedded in the dielectric layer and extending into the trench in the thickness direction. The dielectric layer and the gate conductor are at least substantially symmetric with respect to a center axis of the trench extending in the thickness direction, as seen when the LDMOS transistor is viewed cross-sectionally in a direction orthogonal to the lateral and thickness directions.