Multi-drain gallium-nitride module with multiple voltage ratings
US10199487B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2018 |
| Grant date | Feb 5, 2019 |
| Priority date | — |
| Expiry date | May 15, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A multi-drain power module can include: a plurality of gallium-nitride (GaN) transistor dies connected to each other in series; a plurality of drain terminals, each drain terminal being respectively connected to the drain of a GaN transistor die; a series-switch-driver (SSD) connected to the gate of each GaN transistor die; a gate terminal connected to the SSD; a source terminal connected to a first source of a first GaN transistor die of the plurality of GaN transistor dies; a package encapsulating the plurality of GaN transistor dies and the SSD, and exposing the plurality of drain terminals, the gate terminal, and the source terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.