Laterally diffused metal-oxide semiconductor field-effect transistor

US10199495B2 · kind B2 · utility

Assignee

• CSMC TECHNOLOGIES FAB2 CO., LTD. · CN

Inventors

• Shukun Qi · 安丰镇, CN
• Guipeng Sun · Xinwu District, CN

Key dates

• Filing date: Aug 18, 2016
• Grant date: Feb 5, 2019
• Expiry date: Aug 18, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/126

Abstract

A laterally diffused metal-oxide semiconductor field-effect transistor, comprising a substrate, a first conductivity type well region, a second conductivity type well region, a drain electrode in the first conductivity type well region, a source electrode and a body region in the second conductivity type well region, and a gate electrode arranged across surfaces of the first conductivity type well region and the second conductivity type well region, and also comprising a floating layer ring arranged on the top of the first conductivity type well region and located between the gate electrode and the drain electrode and a plurality of groove polysilicon electrodes running through the floating layer ring and stretching into the first conductivity type well region.