Semiconductor devices including vertical channel transistors
US10199497B2 · kind B2 · utility
2Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2017 |
| Grant date | Feb 5, 2019 |
| Priority date | — |
| Expiry date | Aug 9, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
Abstract
A semiconductor device includes an active pillar that protrudes above a substrate, the active pillar including a pair of vertical sections and a body interconnection between the pair of vertical sections, and each of the pair of vertical sections having a channel body and a lower impurity region below the channel body, word lines coupled to respective channel bodies, and buried bit lines in contact with respective lower impurity regions, wherein the channel bodies are connected to the substrate through the body interconnection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.