Thick damage buffer for foil-based metallization of solar cells
US10199521B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2016 |
| Grant date | Feb 5, 2019 |
| Priority date | — |
| Expiry date | Sep 29, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. A method involves patterning a first surface of a metal foil to provide a plurality of alternating grooves and ridges in the metal foil. Non-conductive material regions are formed in the grooves in the metal foil. The metal foil is located above a plurality of alternating N-type and P-type semiconductor regions disposed in or above a substrate to provide the non-conductive material regions in alignment with locations between the alternating N-type and P-type semiconductor regions and to provide the ridges in alignment with the alternating N-type and P-type semiconductor regions. The ridges of the metal foil are adhered to the alternating N-type and P-type semiconductor regions. The metal foil is patterned through the metal foil from a second surface of the metal foil at regions in alignment with the non-conductive material regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.