Light-emitting diode and method for manufacturing the same
US10199532B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2017 |
| Grant date | Feb 5, 2019 |
| Priority date | — |
| Expiry date | Sep 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
Abstract
A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, and an active layer. The first type semiconductor layer includes a low resistance portion and a high resistance portion. The low resistance portion is separated from at least one edge of the first type semiconductor layer by the high resistance portion, and the resistivity of the first type semiconductor layer is increased from the low resistance portion toward the high resistance portion. The active layer is disposed between the first type semiconductor layer and the second type semiconductor layer. The active layer has a first region and a second region, in which the first region has a threading dislocation density greater than that of the second region, and a vertical projection of the low resistance portion on the active layer at least partially overlaps with the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.