Patent · US Active

Light emitting device

US10199544B2 · kind B2 · utility

0Cited by
1References
20Claims
0Family size

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Key dates

Filing dateDec 29, 2017
Grant dateFeb 5, 2019
Priority date
Expiry dateDec 29, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/835

Abstract

A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.