Patent · US Active

Electrically isolating adjacent vertical-emitting devices

US10199794B1 · kind B1 · utility

8Cited by
2References
20Claims
0Family size

Assignee

Inventor

Key dates

Filing dateFeb 9, 2018
Grant dateFeb 5, 2019
Priority date—
Expiry dateFeb 9, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S2301/176
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A vertical cavity surface emitting laser (VCSEL) array may comprise a doped substrate layer. The VCSEL array may comprise a plurality of VCSELs on the doped substrate layer. The VCSEL array may comprise a buffer structure between the doped substrate layer and the plurality of VCSELs. The buffer structure, or a combination of the buffer structure and a layer of the plurality of VCSELs, may provide electrical isolation from the plurality of VCSELs to the doped substrate layer. The VCSEL array may comprise an isolation structure between adjacent VCSELs of the plurality of VCSELs. The isolation structure may provide electrical isolation between a first VCSEL, of the adjacent VCSELs, and a second VCSEL of the adjacent VCSELs. The first VCSEL and the second VCSEL may be different VCSELs.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.