High-power semiconductor laser based on VCSEL and optical convergence method therefor
US10199801B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2014 |
| Grant date | Feb 5, 2019 |
| Priority date | — |
| Expiry date | Dec 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4012
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a high-power semiconductor laser based on VCSEL, comprising a VCSEL laser module. The VCSEL laser module includes a VCSEL chip array (1) consisting of a plurality of VCSEL chips (10) and an inner wall reflection optical transmission device (2) which is arranged in front of a light emergent face of the VCSEL chip array (1); and the light emergent face of the VCSEL chip array (1) is used for secondarily reflecting the reflected light reflected by a target object (3) and the inner wall reflection optical transmission device (2). Also provided is a packaging structure for the high-power semiconductor laser. The VCSEL chip array (1) is packaged by an inwardly concave arc-shaped heat sink (4), so that the purpose of converging the laser light beam near a centre position can be achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.