Memory device and storage apparatus
US10204003B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2014 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Nov 16, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5685
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A failure region is specified when a failure occurs in a non-volatile semiconductor memory. When a device controller reads data stored in a specific page in a plurality of non-volatile semiconductor memories to detect an uncorrectable error (UE) of the data stored in the specific page, the device controller executes a diagnosis process including specifying a specific storage circuit that is a storage circuit including the specific page, reading data stored in a part of blocks of the specific storage circuit, and specifying, on the basis of a result of reading data stored in the block, a failure region in the specific storage circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.