Method for manufacturing a field-effect transistor
US10204799B2 · kind B2 · utility
3Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2016 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Dec 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a field-effect transistor includes forming an active layer of an oxide semiconductor, forming a conducting film to cover the active layer, patterning the conducting film through an etching process using an etchant to form a source electrode and a drain electrode, and performing, at least before the patterning the conducting film, a treatment on the active layer so that an etching rate of the active layer is less than an etching rate of the conducting film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.