Semiconductor device and electronic device
US10204898B2 · kind B2 · utility
6Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2015 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Aug 4, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/13
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device in which a circuit and a power storage element are efficiently placed is provided. The semiconductor device includes a first transistor, a second transistor, and an electric double-layer capacitor. The first transistor, the second transistor, and the electric double-layer capacitor are provided over one substrate. A band gap of a semiconductor constituting a channel region of the second transistor is wider than a band gap of a semiconductor constituting a channel region of the first transistor. The electric double-layer capacitor includes a solid electrolyte.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.