Semiconductor device and method for fabricating the same
US10204910B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2017 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Oct 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided. The provided semiconductor device may have enhanced reliability and operating characteristics. The semiconductor device includes a substrate, a device isolation film formed within the substrate, a first gate structure formed within the substrate, a recess formed on at least one side of the first gate structure and within the substrate and the device isolation film, the recess comprising an upper portion and a lower portion wherein the lower portion of the recess is formed within the substrate and the upper portion of the recess is formed across the substrate and the device isolation film, a buried contact filling the recess and an information storage electrically connected to the buried contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.