Thin film transistor, array substrate and manufacturing method thereof, and display device
US10204922B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 13, 2016 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Jul 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A metal oxide thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method of the metal oxide thin film transistor includes forming a gate electrode (141), a gate insulating layer (130), an active layer (113) and source and drain electrodes (121, 122) of a thin film transistor on a base substrate. The active layer is prepared by using a metal oxide thin film, and an electrochemical oxidation process is performed on the metal oxide thin film during preparing the active layer, and the metal oxide thin film after the electrochemical oxidation process is patterned to form the active layer of the thin film transistor. By using the manufacturing method of the embodiment, oxygen vacancies of the metal oxide thin film can be reduced, a concentration of free carriers thereof can be controlled, the prepared thin film transistor has good stability, and it is not necessary to add additional photolithography process, slightly affecting the cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.