Thin film transistor, manufacturing method thereof, display substrate and display device
US10204924B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 4, 2016 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Nov 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor (TFT), a manufacturing method thereof, a display substrate and a display device are disclosed. The TFT includes: a gate electrode; a gate insulating layer disposed on the gate electrode; a first active layer disposed on the gate insulating layer; a second active layer disposed on the first active layer, having a length smaller than that of the second active layer; a source electrode disposed on the first active layer, being contacted with a first side of the second active layer; and a drain electrode disposed on the first active layer, being contacted with a second side of the second active layer. Embodiments of the present invention can increase an ON-state current and meanwhile reduce an OFF leakage current in the TFT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.