Semiconductor device and method of manufacturing semiconductor device
US10205010B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 2018 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | May 17, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided, the semiconductor device including a base layer of a first conductivity type having a MOS gate structure formed on a front surface side thereof, a collector layer of a second conductivity type formed on a rear surface side of the base layer, and into which a first dopant and a second dopant which is different from the first dopant are implanted, and a collector electrode formed on a rear surface side of the collector layer, wherein an impurity concentration peak of the second dopant is at a deeper position from the rear surface of the collector layer than an impurity concentration peak of the first dopant, and magnitude of the impurity concentration peak of the second dopant is larger than 1/100 of magnitude of the impurity concentration peak of the first dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.