Semiconductor device having resistance voltage dividing circuit
US10205031B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 27, 2018 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Mar 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/83
Abstract
All resistors configuring a resistance voltage dividing circuit are formed by alternately arranging an N-type polycrystalline silicon and a P-type polycrystalline silicon and connecting the same in parallel or in series. The respective resistors themselves cancel a stress received from a resin upon packaging of the resistance voltage dividing circuit since the N-type polycrystalline silicon and the P-type polycrystalline silicon respectively indicate a shift amount in a reverse direction with respect to a stress. There can hence be provided a resistance voltage dividing circuit in which a variation in voltage division ratio at packaging is reduced than before.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.