Optoelectronic device and the manufacturing method thereof

US10205059B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Chun Lin · Yardley, US
• Yung-Fu Chang · Ithaca, US
• Rong-Ren Lee · Hsinchu, TW
• Kuo-Feng Huang
• Cheng-Long Yeh · Hsinchu, TW
• Yi-Ching Lee · Hsinchu, TW
• Ming-Siang Huang · Hsinchu, TW
• Ming-Tzung Liou · Hsinchu, TW

Key dates

• Filing date: Sep 20, 2017
• Grant date: Feb 12, 2019
• Expiry date: Sep 20, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/819

Abstract

The present disclosure is related to an optoelectronic device comprising a semiconductor stack comprising a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; wherein the second contact layer comprises a plurality of dots separating from each other and formed of semiconductor material.