Method of producing optoelectronic semiconductor components, and optoelectronic semiconductor component

US10205071B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Thomas Schwarz · Rhede, DE
• Andreas Biebersdorf · Regensburg, DE
• Dirk Becker · Bad Hersfeld, DE
• Bernd Barchmann · Regensburg, DE
• Björn Hoxhold · Sinzing, DE
• Philipp Schlosser · Regensburg, DE
• Andreas Waldschik · Wolmirstedt, DE

Key dates

• Filing date: May 19, 2016
• Grant date: Feb 12, 2019
• Expiry date: May 19, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/0365
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of producing optoelectronic semiconductor components includes providing a carrier with a carrier underside and a carrier top. The carrier has a metallic core material and at least on the carrier top a metal layer. A dielectric mirror is applied to the core material. At least two holes are formed through the carrier. A ceramic layer with a thickness of at most 150 μm at least on the carrier underside and in the holes is produced. The ceramic layer includes the core material as a component. Metallic contact layers are applied to at least subregions of the ceramic layer on the carrier underside and in the holes so that the carrier top electrically connects to the carrier underside through the holes. At least one radiation-emitting semiconductor chip is applied to the carrier top and the semiconductor chip is electronically bonded to the contact layers.