Monocrystalline magneto resistance element, method for producing the same and method for using same
US10205091B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2017 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Feb 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3254
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.