Vertical-cavity surface-emitting laser thin wafer bowing control
US10205303B1 · kind B1 · utility
10Cited by
9References
20Claims
0Family size
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Key dates
| Filing date | Oct 18, 2017 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Oct 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/17
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A vertical-cavity surface-emitting laser (VCSEL) wafer, may include: a substrate layer, epitaxial layers grown on the substrate layer, and a strain compensating layer to control bowing of the VCSEL wafer after thinning of the VCSEL wafer. The strain compensating layer may be arranged on an epitaxial side of the substrate layer. The strain compensating layer may control bowing of the thinned VCSEL wafer by at least partially compensating for compressive strain in the epitaxial layers of the VCSEL wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.