Turn-off overvoltage limiting for IGBT
US10205405B2 · kind B2 · utility
1Cited by
11References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2017 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Feb 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M1/0029
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A turn-off overvoltage limiting for IGBT is described herein. The injection of a sample of the overvoltage across the IGBT in the gate drive to slow down the slope of the gate voltage decrease only during the overvoltage above a predetermined value is described herein. Techniques to increase the parasitic inductance to allow the control to limit an overvoltage at turn off of the second IGBT are also described herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.