Nonvolatile memory device, memory system including the same and method of operating the same
US10205431B2 · kind B2 · utility
10Cited by
15References
19Claims
0Family size
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Key dates
| Filing date | Jan 18, 2017 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Jan 18, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/105
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device includes a first memory structure. The first memory structure includes first through N-th memory dies that may be connected to an external memory controller via a first channel. N is a natural number equal to or greater than two. At least one of the first through N-th memory dies is configured to be used as a first representative die that performs an on-die termination (ODT) operation while a data write operation is performed for one of the first through N-th memory dies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.