Formulations for chemical mechanical polishing pads and CMP pads made therewith
US10208154B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2016 |
| Grant date | Feb 19, 2019 |
| Priority date | — |
| Expiry date | Nov 30, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08G18/8019
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A two component composition for making chemical mechanical polishing pad for polishing a semiconductor substrate is provided comprising a liquid aromatic isocyanate component having an unreacted isocyanate (NCO) concentration of from 15 to 40 wt. %, based on the total solids weight of the aromatic isocyanate component, such as methylene di(phenylisocyanate) (MDI), a liquid polyol component of a polyol having a polyether backbone and having from 5 to 7 hydroxyl groups per molecule, and a curative of one or more polyamine or diamine, wherein the reaction mixture comprises 50 to 65 wt. % of hard segment materials, based on the total weight of the reaction mixture. The composition when mixed cured to form a polyurethane reaction product. Also provided are CMP polishing pads made from the polyurethane reaction product by spraying the composition into a mold.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.