Patent · US Active

Localized atmospheric laser chemical vapor deposition

US10208377B2 · kind B2 · utility

0Cited by

6References

18Claims

0Family size

Assignee

Lawrence Livermore National Security, LLC · US

Inventors

Manyalibo Joseph Matthews · Livermore, US
Selim Elhadj · Livermore, US

Key dates

Filing date	Apr 19, 2013
Grant date	Feb 19, 2019
Priority date	—
Expiry date	Apr 19, 2033

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC03C2218/152
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

An atmospheric, Laser-based Chemical Vapor Deposition (LCVD) technique provides highly localized deposition of material to mitigate damage sites on an optical component. The same laser beam can be used to deposit material as well as for in-situ annealing of the deposited material. The net result of the LCVD process is in-filling and planarization of a treated site, which produces optically more damage resistant surfaces. Several deposition and annealing steps can be interleaved during a single cycle for more precise control on amount of deposited material as well as for increasing the damage threshold for the deposited material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.