Integrated circuit sensor device for charge detection hybridizing a lateral metal oxide semiconductor field effect transistor (MOSFET) and a vertical bipolar junction transistor (BJT)
US10209215B2 · kind B2 · utility
0Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2014 |
| Grant date | Feb 19, 2019 |
| Priority date | — |
| Expiry date | Jun 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor based integrated sensor device includes: a lateral insulating-gate field effect transistor (MOSFET) connected in series to the base of a vertical bipolar junction transistor (BJT) wherein the drain-drift-region of the MOSFET is part of the base-region of the BJT within the semiconductor substrate thus making electrical contact to the base of the BJT and the distance of the drain-drift-region of the MOSFET to the emitter of the BJT exceeds the vertical distance between the emitter and any buried layer, serving as collector, and the breakdown voltage of the device being determined by the BVCEO of the vertical BJT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.