Metallic-magnetic-domain-wall-based nonvolatile tunable resistor for memory and sensor applications
US10210970B2 · kind B2 · utility
2Cited by
5References
10Claims
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Key dates
| Filing date | May 20, 2016 |
| Grant date | Feb 19, 2019 |
| Priority date | — |
| Expiry date | Jul 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Control of electrical conductivity is provided via electrically conductive magnetic domain walls between magnetic domains. The magnetic domains are identical except for their magnetic configuration. Altering a configuration of the magnetic domains (e.g., by thermal treatment, application of a magnetic field, etc.) can alter the electrical resistance of a device. Such devices can be used as non-volatile information storage devices or as sensors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.