Methods of fabricating semiconductor devices
US10211210B2 · kind B2 · utility
3Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 24, 2017 |
| Grant date | Feb 19, 2019 |
| Priority date | — |
| Expiry date | May 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes forming an interlayer insulating structure on a substrate, forming a contact hole that penetrates the interlayer insulating structure to expose the substrate, forming an amorphous silicon layer including a first portion and a second portion, the first portion covering a top surface of the substrate exposed by the contact hole, the second portion covering a sidewall of the contact hole, providing hydrogen atoms into the amorphous silicon layer, and crystallizing the first portion using the substrate as a seed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.