Capacitor structures, decoupling structures and semiconductor devices including the same
US10211282B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2017 |
| Grant date | Feb 19, 2019 |
| Priority date | — |
| Expiry date | Sep 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/212
Abstract
Decoupling structures are provided. The decoupling structures may include first conductive patterns, second conductive patterns and a unitary supporting structure that structurally supports the first conductive patterns and the second conductive patterns. The decoupling structures may also include a common electrode disposed between ones of the first conductive patterns and between ones of the second conductive patterns. The first conductive patterns and the common electrode are electrodes of a first capacitor, and the second conductive patterns and the common electrode are electrodes of a second capacitor. The unitary supporting structure may include openings when viewed from a plan perspective. The first conductive patterns and the second conductive patterns are horizontally spaced apart from each other with a separation region therebetween, and none of the openings extend into the separation region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.